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| MUBW 50-06 A7 Converter - Brake - Inverter Module (CBI2) 21 D11 1 D12 D13 2 D14 D15 7 3 D16 14 23 24 8 NTC T7 22 D7 T1 16 15 6 T2 11 10 D2 12 D1 T3 18 17 T4 D3 T5 20 19 T6 13 D5 5 D4 4 D6 9 Three Phase Rectifier VRRM = 1600V IDAVM = 44 A IFSM = 400 A Brake Chopper VCES = 600 V IC25 = 35 A VCE(sat) = 2.1 V Three Phase Inverter VCES = 600 V IC25 = 75 A VCE(sat) = 1.9 V Application: AC motor drives with q Input Rectifier Bridge D11 - D16 Symbol VRRM IFAV IDAVM IFSM Ptot TC = 80C; sine 180 TC = 80C; rectangular; d = 1/3 TVJ = 25C; t = 10 ms; sine 50 Hz TC = 25C Conditions Maximum Ratings 1600 30 29 400 120 V A A A W q q Input from single or three phase grid Three phase synchronous or asynchronous motor electric braking operation Features q q q Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.5 1.6 2 1 1.8 0.2 V V mA mA s 1.06 K/W q VF IR trr RthJC IF = 50 A; TVJ = 25C TVJ = 125C VR = VRRM; TVJ = 25C TVJ = 125C VR = 100 V; IF = 20 A; di/dt = -20 A/s (per diode) q q High level of integration - only one power semiconductor module required for the whole drive Fast rectifier diodes for enhanced EMC behaviour NPT IGBT technology with low saturation voltage, low switching losses, high RBSOA and short circuit ruggedness Epitaxial free wheeling diodes with Hiperfast and soft reverse recovery Industry standard package with insulated copper base plate and soldering pins for PCB mounting Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. (c) 2001 IXYS All rights reserved 1-8 105 MUBW 50-06 A7 Output Inverter T1 - T6 Symbol VCES VGES VGEM IC25 IC80 RBSOA tSC (SCSOA) Ptot Conditions TVJ = 25C to 150C Continuous Transient TC = 25C TC = 80C VGE = 15 V; RG = 22 ; TVJ = 125C Clamped inductive load; L = 100 H Maximum Ratings 600 20 30 75 50 ICM = 100 VCEK VCES 10 250 V V V A A A s W Equivalent Circuits for Simulation Conduction D11 - D16 Rectifier Diode (typ. at TJ = 125C) V0 = 1.0 V; R0 = 12 m T1 - T6 / D1 - D6 IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.82 V; R0 = 28 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 0.89 V; R0 = 8 m T7 / D7 IGBT (typ. at VGE = 15 V; TJ = 125C) V0 = 0.9 V; R0 = 65 m Free Wheeling Diode (typ. at TJ = 125C) V0 = 1.07 V; R0 = 23 m VCE = VCES; VGE = 15 V; RG = 22 ; TVJ = 125C non-repetitive TC = 25C Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 1.9 2.2 4.5 0.7 200 50 55 300 30 2.3 1.7 2800 120 2.4 6.5 0.8 V V V mA mA nA ns ns ns ns mJ mJ pF nC 0.5 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 50 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 1 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Thermal Response Inductive load, TVJ = 125C VCE = 300 V; IC = 50 A VGE = 15 V; RG = 22 D11 - D16 Rectifier Diode (typ.) Cth1 = 0.131 J/K; Rth1 = 0.851 K/W Cth2 = 0.839 J/K; Rth2 = 0.209 K/W T1 - T6 / D1 - D6 IGBT (typ.) Cth1 = 0.221 J/K; Rth1 = 0.382 K/W Cth2 = 1.377 J/K; Rth2 = 0.119 K/W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 300V; VGE = 15 V; IC = 50 A (per IGBT) Output Inverter D1 - D6 Symbol IF25 IF80 Conditions TC = 25C TC = 80C Maximum Ratings 72 45 A A Free Wheeling Diode (typ.) Cth1 = 0.116 J/K; Rth1 = 0.973 K/W Cth2 = 0.88 J/K; Rth2 = 0.217 K/W T7 / D7 Symbol VF IRM trr RthJC Conditions IF = 50 A; VGE = 0 V; TVJ = 25C TVJ = 125C IF = 25 A; diF/dt = -500 A/s; TVJ = 125C VR = 300 V; VGE = 0 V (per diode) Characteristic Values min. typ. max. 1.8 1.3 25 90 V V A ns 1.19 K/W IGBT (typ.) Cth1 = 0.108 J/K; Rth1 = 0.79 K/W Cth2 = 0.921 J/K; Rth2 = 0.209 K/W Free Wheeling Diode (typ.) Cth1 = 0.043 J/K; Rth1 = 2.738 K/W Cth2 = 0.54 J/K; Rth2 = 0.462 K/W (c) 2001 IXYS All rights reserved 2-8 MUBW 50-06 A7 Brake Chopper T7 Symbol VCES VGES VGEM IC25 IC80 RBSOA tSC (SCSOA) Ptot Symbol Conditions TVJ = 25C to 150C Continuous Transient TC = 25C TC = 80C VGE = 15 V; RG = 47 ; TVJ = 125C Clamped inductive load; L = 100 H VCE = VCES; VGE = 15 V; RG = 47 ; TVJ = 125C non-repetitive TC = 25C Conditions Maximum Ratings 600 20 30 35 25 ICM = 40 VCEK VCES 10 125 V V V A A A s W Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 2.1 2.4 4.5 0.3 200 50 60 300 30 1.15 0.85 1100 65 2.6 6.5 0.5 V V V mA mA nA ns ns ns ns mJ mJ pF nC 1.0 K/W VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf Eon Eoff Cies QGon RthJC IC = 25 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.5 mA; VGE = VCE VCE = VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 300 V; IC = 25 A VGE = 15 V; RG = 47 VCE = 25 V; VGE = 0 V; f = 1 MH z VCE = 300 V; VGE = 15 V; IC = 25 A Brake Chopper D7 Symbol VRRM IF25 IF80 Symbol VF IR IRM trr RthJC (c) 2001 IXYS All rights reserved Conditions TVJ = 25C to 150C TC = 25C TC = 80C Conditions IF = 25 A; TVJ = 25C TVJ = 125C VR = VRRM; TVJ = 25C TVJ = 125C IF = 10 A; diF/dt = -400 A/s; TVJ = 125C VR = 300 V Maximum Ratings 600 22 15 V A A Characteristic Values min. typ. max. 2.5 1.8 0.06 0.07 11 80 V V mA mA A ns 3.2 K/W 3-8 MUBW 50-06 A7 Temperature Sensor NTC Symbol R25 B25/50 Module Symbol TVJ TJM Tstg VISOL Md Symbol Rpin-chip dS dA RthCH Weight Dimensions in mm (1 mm = 0.0394") Creepage distance on surface Strike distance in air with heatsink compound 6 6 0.02 180 Conditions Operating Maximum Ratings -40...+125 150 -40...+125 2500 2.7 - 3.3 C C C V~ Nm Conditions T = 25C Characteristic Values min. typ. max. 4.75 5.0 3375 5.25 k K IISOL 1 mA; 50/60 Hz Mounting torque (M5) Conditions Characteristic Values min. typ. max. 5 m mm mm K/W g (c) 2001 IXYS All rights reserved 4-8 MUBW 50-06 A7 Input Rectifier Bridge D11 - D16 120 A 100 IF 80 TVJ= 125C TVJ= 25C 60 80 40 40 TVJ= 125C 120 200 A 160 IFSM TVJ= 45C 50Hz, 80% VRRM 103 A2s I2t TVJ= 125C TVJ= 45C 20 0 0.0 0.5 1.0 1.5 VF 2.0 V 2.5 0 0.001 102 0.01 0.1 t s 1 1 2 3 4 5 6 7 ms10 89 t Fig. 1 Forward current versus voltage drop per diode 800 W 600 Ptot Fig. 2 Surge overload current Fig. 3 I2t versus time per diode 100 A 80 Id(AV) 60 400 RthA: 0.05 K/W 0.15 K/W 0.3 K/W 0.5 K/W 1 K/W 2 K/W 5 K/W 40 200 20 0 0 40 80 120 Id(AV)M A 0 20 40 60 80 100 120 140 C Tamb 0 0 20 40 60 80 100 120 140 C TC Fig. 4 1 1.2 K/W 1.0 ZthJC 0.8 Power dissipation versus direct output current and ambient temperature, sin 8 0 Fig. 5 Max. forward current versus case temperature 0.6 0.4 0.2 DWFN21-16 0.0 0.001 0.01 0.1 1 t s 10 Fig. 6 Transient thermal impedance junction to case (c) 2001 IXYS All rights reserved 5-8 MUBW 50-06 A7 Output Inverter T1 - T6 / D1 - D6 150 A 120 VGE= 17V 15V 13V 150 A 120 90 11V VGE= 17V 15V 13V IC IC 90 60 30 0 0 1 2 3 4 VCE 5 V 9V TVJ = 25C 11V 60 30 0 9V TVJ = 125C 6 0 1 2 3 4 VCE 5V 6 Fig. 7 Typ. output characteristics Fig. 8 Typ. output characteristics 150 A 120 IC 90 75 A IF 60 90 45 60 TVJ = 125C TVJ = 125C TVJ = 25C 30 TVJ = 25C 30 0 4 6 8 10 12 VGE VCE = 20V 15 0 0.0 14 V 16 0.5 1.0 1.5 VF V 2.0 Fig. 9 Typ. transfer characteristics Fig. 10 Typ. forward characteristics of free wheeling diode # ns ' $ TVJ = 125C VR = 300V IF = 30A MUBW5006A7 20 V 50 40 A IRM 15 VGE trr trr 30 10 20 5 VCE = 300V IC = 50A 10 IRM ! 0 0 40 80 120 QG nC 0 160 0 200 400 600 800 A/s -di/dt 1000 Fig. 11 Typ. turn on gate charge Fig. 12 Typ. turn off characteristics of free wheeling diode (c) 2001 IXYS All rights reserved 6-8 MUBW 50-06 A7 Output Inverter T1 - T6 / D1 - D6 10.0 mJ Eon Jd(on) 100 ns 75 t Jr Eoff 4 mJ Eoff 400 ns 300 t Jd(off) 7.5 3 5.0 VCE = 300V VGE = 15V 50 2 VCE = 300V VGE = 15V 200 2.5 Eon RG = 22 TVJ = 125C 25 1 RG = 22 TVJ = 125C 100 0.0 0 40 80 IC A 0 120 0 0 40 80 IC Jf A 0 120 Fig. 13 Typ. turn on energy and switching times versus collector current 4 mJ Eon Eon Jr 80 ns 60 t Eoff Fig. 14 Typ. turn off energy and switching times versus collector current 3 mJ Eoff 600 ns Jd(on) 3 2 Jd(off) VCE = 300V VGE = 15V IC = 50A TVJ = 125C 400 t 2 VCE = 300V VGE = 15V IC = 50A TVJ = 125C 40 1 20 200 1 0 0 10 20 30 40 RG 0 50 60 0 0 10 20 30 40 RG 0 50 60 Jf Fig. 15 Typ. turn on energy and switching times versus gate resistor 120 A ICM 10 K/W ZthJC 1 Fig.16 Typ. turn off energy and switching times versus gate resistor diode IGBT 90 0.1 60 0.01 30 RG = 22 TVJ = 125C single pulse 0.001 0.0001 0.00001 0.0001 0.001 MUBW5006A7 0 0 100 200 300 400 500 600 VCE 700 V 0.01 0.1 t 1 s 10 Fig. 17 Reverse biased safe operating area RBSOA Fig. 18 Typ. transient thermal impedance (c) 2001 IXYS All rights reserved 7-8 MUBW 50-06 A7 Brake Chopper T7 / D7 60 A 50 IC 20 A IF 15 40 TVJ = 25C TVJ = 125C TVJ = 125C TVJ = 25C 30 20 10 5 10 VGE = 15V 0 0 1 2 3 4 VCE 0 5 V6 0 1 2 VF V 3 Fig. 19 Typ. output characteristics Fig. 20 Typ. forward characteristics of free wheeling diode 400 ns 300 t Eoff 2.0 mJ Eoff 1.5 Jd(off) 1.0 mJ 500 ns 400 t Eoff Jd(off) 300 VCE = 300V VGE = 15V IC = 25A TVJ = 125C 0.8 0.6 1.0 VCE = 300V VGE = 15V 200 0.4 100 200 100 0.5 Eoff Jf RG = 47 TVJ = 125C 0.2 0.0 0 Jf 20 40 60 80 0.0 0 10 20 30 IC 40 A 0 50 0 100 120 RG Fig. 21 Typ. turn off energy and switching times versus collector current 10 K/W 1 ZthJC 0.1 R 0.01 0.001 single pulse diode Fig. 22 Typ. turn off energy and switching times versus gate resistor Temperature Sensor NTC 10000 1000 IGBT 0.0001 0.00001 0.0001 0.001 100 0.01 0.1 t 1 s 10 0 25 50 75 100 T MUBW5006A7 125 C 150 Fig. 23 Typ. transient thermal impedance Fig. 24 Typ. thermistorresistance versus temperature (c) 2001 IXYS All rights reserved 8-8 |
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